
Specifications
Part Number
ZXMN10A08E6TA, ZXMN10B08E6TA
Maximum Drain Source Resistance
300 mΩ, 230 mΩ
Maximum Operating Temperature
+150°C
Brand
Diodes Zetex
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
1.9 A
Mounting Type
Surface Mount
Pin Count
6
Transistor Configuration
Single
Typical Input Capacitance Vds
405 pF @ 50 V, 497 pF@ 50 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
3 x 1.75 x 1.3 mm, 3.1 x 1.8 x 1.3 mm
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4 V, 3 V
Maximum Power Dissipation
1.7 W
Minimum Operating Temperature
-55°C
Package Type
SOT-23
Number of Elements Per Chip
1
Transistor Material
Si
Typical Gate Charge at Vgs
4.2 nC @ 5 V, 5 nC @ 5 V, 9.2 nC @ 10 V
Typical Turn Off Delay Time
8 ns, 12.1 ns
Typical Turn On Delay Time
3.4 ns, 2.9 ns
Select Variants