
Specifications
Part Number
DMG6601LVT-7
Maximum Drain Source Resistance
85 mΩ, 190 mΩ
Maximum Operating Temperature
+150°C
Brand
Diodes Zetex
Channel Type
N Channel, P Channel
Maximum Gate Source Voltage
12 V
Maximum Continuous Drain Current
4.5 A
Mounting Type
Surface Mount
Pin Count
6
Transistor Configuration
Isolated
Typical Input Capacitance Vds
422 pF@ 15 V, 541 pF@ -15 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
2.9 x 1.6 x 0.9 mm
Maximum Drain Source Voltage
30 V
Maximum Gate Threshold Voltage
3 V
Maximum Power Dissipation
1.3 W
Minimum Operating Temperature
-55°C
Package Type
TSOT-26
Number of Elements Per Chip
2
Transistor Material
Si
Typical Gate Charge at Vgs
12.3 nC @ 10 V, 13.8 nC @ 10 V
Typical Turn Off Delay Time
18.3 ns, 31.2 ns
Typical Turn On Delay Time
1.6 ns, 1.7 ns