Infineon BC850CE6327HTSA1 Bipolar Transistor, Surface Mount

Brand

Infineon

Part Number

BC850CE6327HTSA1

Transistor Type

NPN

Maximum Operating Temperature

+150°C

Maximum Power Dissipation

330 mW

Mounting Type

Surface Mount

Pin Count

3

Dimensions

2.9 x 1.3 x 0.9 mm

Maximum Base Emitter Saturation Voltage

900 mV

Maximum Collector Base Voltage

50 V

Maximum Collector Emitter Saturation Voltage

600 mV

Maximum Collector Emitter Voltage

50 V

Maximum DC Collector Current

100 mA

Maximum Emitter Base Voltage

6 V

Minimum DC Current Gain

110

Number of Elements per Chip

1

Package Type

SOT-23

Transistor Configuration

Single

Transistor Material

Si