Infineon IKW75N65EL5XKSA1 IGBT Transistor, Through Hole

Brand

Infineon

Part Number

IKW75N65EL5XKSA1

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Channel Type

N

Dimensions

16.13 x 5.21 x 21.1 mm

Gate Capacitance

12100 pF

Maximum Collector Emitter Voltage

650 V

Maximum Continuous Collector Current

75 A

Maximum Gate Emitter Voltage

±20 V

Maximum Operating Temperature

+175°C

Maximum Power Dissipation

536 W

Minimum Operating Temperature

-40°C

Package Type

TO-247

Energy Rating

7.22 mJ