Infineon IKZ75N65EH5XKSA1 IGBT Transistor, Through Hole

Brand

Infineon

Part Number

IKZ75N65EH5XKSA1

Mounting Type

Through Hole

Pin Count

4

Transistor Configuration

Single

Channel Type

P

Dimensions

16.3 x 5.21 x 21.1 mm

Gate Capacitance

4300 pF

Maximum Collector Emitter Voltage

650 V

Maximum Continuous Collector Current

90 A

Maximum Gate Emitter Voltage

±30 V

Maximum Operating Temperature

+175°C

Maximum Power Dissipation

395 W

Minimum Operating Temperature

-40°C

Number of Transistors

1

Package Type

TO-247

Switching Speed

100 kHz

Energy Rating

1.11