Infineon IRG7PH35UD-EP IGBT Transistor, Through Hole

Brand

Infineon

Part Number

IRG7PH35UD-EP

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Channel Type

N

Dimensions

15.87 x 5.31 x 20.7 mm

Gate Capacitance

1940 pF

Maximum Collector Emitter Voltage

1200 V

Maximum Continuous Collector Current

50 A

Maximum Gate Emitter Voltage

±30 V

Maximum Operating Temperature

+150°C

Maximum Power Dissipation

180 W

Minimum Operating Temperature

-55°C

Package Type

TO-247AD

Switching Speed

1 MHz

Energy Rating

2150 µJ