
Specifications
Part Number
IRLR3110ZPBF, IRLR3110ZTRLPBF, IRLR3110ZTRPBF
Maximum Drain Source Resistance
14 mΩ, 16 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
16 V
Maximum Continuous Drain Current
63 A
Mounting Type
Surface Mount
Forward Diode Voltage
1.3 V
Forward Transconductance
52 S
Pin Count
3
Transistor Configuration
Single
Typical Input Capacitance Vds
3980 pF@ 25 V, 3980 pF @ 25 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
6.73 x 6.22 x 2.39 mm, 10.67 x 9.65 x 4.83 mm, 6.73 x 7.49 x 2.39 mm
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
2.5 V
Maximum Power Dissipation
140 W
Minimum Gate Threshold Voltage
1 V
Minimum Operating Temperature
-55°C
Package Type
DPAK (TO-252), D2PAK (TO-263)
Number of Elements Per Chip
1
Series
HEXFET
Transistor Material
Si
Typical Gate Charge at Vgs
34 nC @ 4.5 V
Typical Turn Off Delay Time
33 ns
Typical Turn On Delay Time
24 ns
Select Variants