Infineon N Channel MOSFET Transistor, 16 V, 63 A, Surface Mount

Specifications

Product Details

Part Number

IRLR3110ZPBF, IRLR3110ZTRLPBF, IRLR3110ZTRPBF

Maximum Drain Source Resistance

14 mΩ, 16 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

16 V

Maximum Continuous Drain Current

63 A

Mounting Type

Surface Mount

Additional Details

Forward Diode Voltage

1.3 V

Forward Transconductance

52 S

Pin Count

3

Transistor Configuration

Single

Typical Input Capacitance Vds

3980 pF@ 25 V, 3980 pF @ 25 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

6.73 x 6.22 x 2.39 mm, 10.67 x 9.65 x 4.83 mm, 6.73 x 7.49 x 2.39 mm

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

2.5 V

Maximum Power Dissipation

140 W

Minimum Gate Threshold Voltage

1 V

Minimum Operating Temperature

-55°C

Package Type

DPAK (TO-252), D2PAK (TO-263)

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

34 nC @ 4.5 V

Typical Turn Off Delay Time

33 ns

Typical Turn On Delay Time

24 ns

Quantity

Select Variants

  • Part Number : IRLR3110ZPBF
    Maximum Drain Source Resistance : 14 mΩ
  • Part Number : IRLR3110ZTRLPBF
    Maximum Drain Source Resistance : 16 mΩ
  • Maximum Operating Temperature : +175°C
    Part Number : IRLR3110ZTRPBF
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