Infineon N Channel MOSFET Transistor, 20 V, 10 A, Surface Mount

Part Number

IRF7854TRPBF, IRFH5210TRPBF

Maximum Drain Source Resistance

13.4 mΩ, 14.9 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

10 A

Mounting Type

Surface Mount

Forward Diode Voltage

1.3 V

Forward Transconductance

12 S, 66 S

Pin Count

8

Typical Input Capacitance Vds

1620 pF @ 25 V, 2570 pF @ 25 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

5 x 4 x 1.5 mm, 5 x 6 x 0.9 mm

Maximum Drain Source Voltage

80 V, 100 V

Maximum Gate Threshold Voltage

4.9 V, 4 V

Maximum Power Dissipation

2.5 W, 104 W

Minimum Gate Threshold Voltage

3 V, 2 V

Minimum Operating Temperature

-55°C

Package Type

SOIC, PQFN

Number of Elements Per Chip

1

Series

HEXFET

Typical Gate Charge at Vgs

27 nC @ 10 V, 40 nC @ 10 V

Typical Turn Off Delay Time

15 ns, 21 ns

Typical Turn On Delay Time

9.4 ns, 7.2 ns