Infineon N Channel MOSFET Transistor, 20 V, 100 A, Through Hole

Part Number

AUIRFU8401, IPI037N08N3GXKSA1, IPI100N08S207AKSA1, IPI100N10S305AKSA1, IPP029N06NAKSA1, IPP030N10N3GXKSA1, IPP034NE7N3GXKSA1, IPP037N08N3GXKSA1, IPP048N12N3GXKSA1, IPP05CN10NGXKSA1, IPP100N04S204AKSA1, IPP100N10S305AKSA1, IRF1104PBF

Maximum Drain Source Resistance

4.2 mΩ, 3.5 mΩ, 7.1 mΩ, 4.8 mΩ, 4.4 mΩ, 3.4 mΩ, 6.3 mΩ, 5.4 mΩ, 3.3 mΩ, 5.1 mΩ, 9 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

100 A

Mounting Type

Through Hole

Forward Diode Voltage

1.2 V

Forward Transconductance

188 S, 149 S, 162 S

Pin Count

3

Transistor Configuration

Single

Typical Input Capacitance Vds

2200 pF@ 25 V, 6100 pF @ 40 V, 4700 pF @ 25 V, 8900 pF @ 25 V, 4100 pF @ 30 V, 11100 pF @ 50 V, 6110 pF @ 37.5 V, 9030 pF@ 60 V, 9050 pF @ 50 V, 5300 pF @ 25 V, 2900 pF@ 25 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

6.73 x 2.39 x 6.22 mm, 10.36 x 4.52 x 9.45 mm, 10 x 4.4 x 9.25 mm, 10.36 x 4.57 x 15.95 mm, 10.54 x 4.69 x 8.77 mm

Maximum Drain Source Voltage

40 V, 80 V, 75 V, 100 V, 60 V, 120 V

Maximum Gate Threshold Voltage

3.9 V, 3.5 V, 4 V, 3.3 V, 3.8 V

Maximum Power Dissipation

79 W, 214 W, 300 W, 136 W, 170 W

Minimum Gate Threshold Voltage

2.2 V, 2 V, 2.1 V, 2.3 V

Minimum Operating Temperature

-55°C

Package Type

IPAK (TO-251), I2PAK (TO-262), TO-220, TO-220AB

Number of Elements Per Chip

1

Series

COOLiRFET, OptiMOS 3, OptiMOS, OptiMOS T, OptiMOS 5, OptiMOS 2, HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

42 nC @ 10 V, 88 nC @ 10 V, 144 nC @ 10 V, 135 nC @ 10 V, 56 nC @ 10 V, 155 nC @ 10 V, 137 nC, 136 nC @ 10 V, 125 nC @ 10 V, 93 nC @ 10 V

Typical Turn Off Delay Time

25 ns, 45 ns, 61 ns, 60 ns, 30 ns, 84 ns, 40 ns, 64 ns, 56 ns, 28 ns

Typical Turn On Delay Time

7.9 ns, 23 ns, 26 ns, 34 ns, 17 ns, 16 ns, 31 ns, 28 ns, 27 ns, 15 ns