Infineon N Channel MOSFET Transistor, 20 V, 104 A, Through Hole

Part Number

IRFB4115GPBF, IRFB4115PBF

Maximum Drain Source Resistance

11 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

104 A

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Typical Input Capacitance Vds

5270 pF @ 50 V, 5270 pF@ 50 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.67 x 4.83 x 16.51 mm, 10.67 x 4.83 x 9.02 mm

Maximum Drain Source Voltage

150 V

Maximum Gate Threshold Voltage

5 V

Maximum Power Dissipation

380 W

Minimum Gate Threshold Voltage

3 V

Minimum Operating Temperature

-55°C

Package Type

TO-220AB

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

77 nC @ 10 V

Typical Turn Off Delay Time

41 ns

Typical Turn On Delay Time

18 ns