Infineon N Channel MOSFET Transistor, 20 V, 11.8 A, Surface Mount

Specifications

Product Details

Part Number

IRF7811AVPBF

Maximum Drain Source Resistance

14 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

11.8 A

Mounting Type

Surface Mount

Additional Details

Pin Count

8

Transistor Configuration

Single

Typical Input Capacitance Vds

1801 pF @ 10 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

5 x 4 x 1.5 mm

Maximum Drain Source Voltage

30 V

Maximum Gate Threshold Voltage

3 V

Maximum Power Dissipation

3 W

Minimum Gate Threshold Voltage

1 V

Minimum Operating Temperature

-55°C

Package Type

SOIC

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

17 nC @ 5 V

Typical Turn Off Delay Time

43 ns

Typical Turn On Delay Time

8.6 ns

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