
Specifications
Part Number
IRF7811AVPBF
Maximum Drain Source Resistance
14 mΩ
Maximum Operating Temperature
+150°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
11.8 A
Mounting Type
Surface Mount
Pin Count
8
Transistor Configuration
Single
Typical Input Capacitance Vds
1801 pF @ 10 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
5 x 4 x 1.5 mm
Maximum Drain Source Voltage
30 V
Maximum Gate Threshold Voltage
3 V
Maximum Power Dissipation
3 W
Minimum Gate Threshold Voltage
1 V
Minimum Operating Temperature
-55°C
Package Type
SOIC
Number of Elements Per Chip
1
Series
HEXFET
Transistor Material
Si
Typical Gate Charge at Vgs
17 nC @ 5 V
Typical Turn Off Delay Time
43 ns
Typical Turn On Delay Time
8.6 ns