Infineon N Channel MOSFET Transistor, 20 V, 119 A, Surface Mount
Specifications
Product Details
Part Number
IRFR4104PBF
Maximum Drain Source Resistance
6 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
119 A
Mounting Type
Surface Mount
Additional Details
Pin Count
3
Transistor Configuration
Single
Typical Input Capacitance Vds
2950 pF@ 25 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
6.73 x 6.22 x 2.39 mm
Maximum Drain Source Voltage
40 V
Maximum Gate Threshold Voltage
4 V
Maximum Power Dissipation
140 W
Minimum Gate Threshold Voltage
2 V
Minimum Operating Temperature
-55°C
Package Type
DPAK (TO-252)
Number of Elements Per Chip
1
Series
HEXFET
Transistor Material
Si
Typical Gate Charge at Vgs
59 nC @ 10 V
Typical Turn Off Delay Time
37 ns
Typical Turn On Delay Time
17 ns