
Specifications
Part Number
IRF7769L1TRPBF
Maximum Drain Source Resistance
3.5 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
124 A
Mounting Type
Surface Mount
Forward Diode Voltage
1.3 V
Forward Transconductance
410 S
Pin Count
9+Tab
Typical Input Capacitance Vds
11560 pF @ 25 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
8.5 x 7.1 x 5.2 mm
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4 V
Maximum Power Dissipation
125 W
Minimum Gate Threshold Voltage
2 V
Minimum Operating Temperature
-55°C
Package Type
L8
Number of Elements Per Chip
1
Series
DirectFET, HEXFET
Typical Gate Charge at Vgs
200 nC @ 10 V
Typical Turn Off Delay Time
92 ns
Typical Turn On Delay Time
44 ns