Infineon N Channel MOSFET Transistor, 20 V, 16 A, Through Hole

Part Number

IRFU3910PBF, SPP16N50C3XKSA1, SPW16N50C3FKSA1

Maximum Drain Source Resistance

115 mΩ, 280 mΩ

Maximum Operating Temperature

+175°C, +150°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

16 A

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Typical Input Capacitance Vds

640 pF@ 25 V, 1600 pF @ 25 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

6.73 x 2.39 x 6.22 mm, 10.36 x 4.57 x 15.95 mm, 16.13 x 5.21 x 21.1 mm

Maximum Drain Source Voltage

100 V, 560 V

Maximum Gate Threshold Voltage

4 V, 3.9 V

Maximum Power Dissipation

79 W, 160 W

Minimum Gate Threshold Voltage

2 V, 2.1 V

Minimum Operating Temperature

-55°C

Package Type

IPAK (TO-251), TO-220, TO-247

Number of Elements Per Chip

1

Series

HEXFET, CoolMOS C3

Transistor Material

Si

Typical Gate Charge at Vgs

44 nC @ 10 V, 66 nC @ 10 V

Typical Turn Off Delay Time

37 ns, 50 ns

Typical Turn On Delay Time

6.4 ns, 10 ns