
Specifications
Part Number
IRL40B212, IRL40B215
Maximum Drain Source Resistance
3.5 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
164 A
Mounting Type
Through Hole
Forward Diode Voltage
1.2 V
Forward Transconductance
176 S
Pin Count
3
Transistor Configuration
Single
Typical Input Capacitance Vds
5225 pF@ 25 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10.67 x 4.83 x 16.51 mm
Maximum Drain Source Voltage
40 V
Maximum Gate Threshold Voltage
2.4 V
Maximum Power Dissipation
143 W
Minimum Gate Threshold Voltage
1 V
Minimum Operating Temperature
-55°C
Package Type
TO-220
Number of Elements Per Chip
1
Series
StrongIRFET
Transistor Material
Si
Typical Gate Charge at Vgs
56 nC
Typical Turn Off Delay Time
63 ns
Typical Turn On Delay Time
21 ns
Select Variants