Infineon N Channel MOSFET Transistor, 20 V, 164 A, Through Hole

Specifications

Product Details

Part Number

IRL40B212, IRL40B215

Maximum Drain Source Resistance

3.5 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

164 A

Mounting Type

Through Hole

Additional Details

Forward Diode Voltage

1.2 V

Forward Transconductance

176 S

Pin Count

3

Transistor Configuration

Single

Typical Input Capacitance Vds

5225 pF@ 25 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.67 x 4.83 x 16.51 mm

Maximum Drain Source Voltage

40 V

Maximum Gate Threshold Voltage

2.4 V

Maximum Power Dissipation

143 W

Minimum Gate Threshold Voltage

1 V

Minimum Operating Temperature

-55°C

Package Type

TO-220

Number of Elements Per Chip

1

Series

StrongIRFET

Transistor Material

Si

Typical Gate Charge at Vgs

56 nC

Typical Turn Off Delay Time

63 ns

Typical Turn On Delay Time

21 ns

Quantity

Select Variants

  • Part Number : IRL40B212
    Maximum Drain Source Resistance : 3.5 mΩ
  • Maximum Drain Source Resistance : 3.5 mΩ
    Maximum Operating Temperature : +175°C
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