Infineon N Channel MOSFET Transistor, 20 V, 190 A, Surface Mount

Part Number

IRF1404ZSPBF, IRFS4010TRL7PP

Maximum Drain Source Resistance

4 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

190 A

Mounting Type

Surface Mount

Forward Diode Voltage

1.3 V

Forward Transconductance

210 S

Pin Count

3, 7+Tab

Transistor Configuration

Single

Typical Input Capacitance Vds

4340 pF@ 25 V, 9830 pF @ 50 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.67 x 9.65 x 4.83 mm

Maximum Drain Source Voltage

40 V, 100 V

Maximum Gate Threshold Voltage

4 V

Maximum Power Dissipation

220 W, 380 W

Minimum Gate Threshold Voltage

2 V

Minimum Operating Temperature

-55°C

Package Type

D2PAK (TO-263)

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

100 nC @ 10 V, 150 nC @ 10 V

Typical Turn Off Delay Time

36 ns, 100 ns

Typical Turn On Delay Time

18 ns, 19 ns