
Specifications
Part Number
IRF7503TRPBF
Maximum Drain Source Resistance
135 mΩ
Maximum Operating Temperature
+150°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
2.4 A
Mounting Type
Surface Mount
Pin Count
8
Transistor Configuration
Isolated
Typical Input Capacitance Vds
210 pF @ 25 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
3 x 3 x 0.86 mm
Maximum Drain Source Voltage
30 V
Maximum Gate Threshold Voltage
1 V
Maximum Power Dissipation
1.25 W
Minimum Gate Threshold Voltage
1 V
Minimum Operating Temperature
-55°C
Package Type
MSOP
Number of Elements Per Chip
2
Series
HEXFET
Transistor Material
Si
Typical Gate Charge at Vgs
7.8 nC @ 10 V
Typical Turn Off Delay Time
12 ns
Typical Turn On Delay Time
4.7 ns