Infineon N Channel MOSFET Transistor, 20 V, 280 A, Surface Mount
Specifications
Product Details
Part Number
IRF2804SPBF
Maximum Drain Source Resistance
2 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
280 A
Mounting Type
Surface Mount
Additional Details
Pin Count
3
Transistor Configuration
Single
Typical Input Capacitance Vds
6450 pF@ 25 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10.67 x 9.65 x 4.83 mm
Maximum Drain Source Voltage
40 V
Maximum Gate Threshold Voltage
4 V
Maximum Power Dissipation
330 W
Minimum Gate Threshold Voltage
2 V
Minimum Operating Temperature
-55°C
Package Type
D2PAK (TO-263)
Number of Elements Per Chip
1
Series
HEXFET
Transistor Material
Si
Typical Gate Charge at Vgs
160 nC @ 10 V
Typical Turn Off Delay Time
130 ns
Typical Turn On Delay Time
13 ns