Infineon N Channel MOSFET Transistor, 20 V, 3.6 A, Through Hole
Specifications
Product Details
Part Number
IRFB812PBF
Maximum Drain Source Resistance
2.2 Ω
Maximum Operating Temperature
+150°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
3.6 A
Mounting Type
Through Hole
Additional Details
Pin Count
3
Transistor Configuration
Single
Typical Input Capacitance Vds
810 pF@ 25 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10.67 x 4.83 x 16.51 mm
Maximum Drain Source Voltage
500 V
Maximum Gate Threshold Voltage
5 V
Maximum Power Dissipation
78 W
Minimum Gate Threshold Voltage
3 V
Minimum Operating Temperature
-55°C
Package Type
TO-220AB
Number of Elements Per Chip
1
Series
HEXFET
Transistor Material
Si
Typical Gate Charge at Vgs
20 nC @ 10 V
Typical Turn Off Delay Time
24 ns
Typical Turn On Delay Time
14 ns