Infineon N Channel MOSFET Transistor, 20 V, 35 A, Surface Mount

Part Number

BSZ130N03LSGATMA1, BSZ130N03MSGATMA1, IPB35N10S3L26ATMA1, IRF6643TRPBF, IRFR540ZPBF

Maximum Drain Source Resistance

21 mΩ, 15 mΩ, 26.3 mΩ, 34.5 mΩ, 29 mΩ

Maximum Operating Temperature

+150°C, +175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

35 A

Mounting Type

Surface Mount

Forward Diode Voltage

1.1 V, 1.3 V

Forward Transconductance

45 S, 16 S

Pin Count

8, 3, 3+Tab

Transistor Configuration

Single

Typical Input Capacitance Vds

730 pF @ 15 V, 970 pF @ 15 V, 2070 pF @ 25 V, 2340 pF @ 25 V, 1690 pF@ 25 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

3.4 x 3.4 x 1.1 mm, 10.31 x 9.45 x 4.57 mm, 6.35 x 5.05 x 0.59 mm, 6.73 x 6.22 x 2.39 mm

Maximum Drain Source Voltage

30 V, 100 V, 150 V

Maximum Gate Threshold Voltage

2 V, 2.4 V, 4.9 V, 4 V

Maximum Power Dissipation

25 W, 71 W, 89 W, 91 W

Minimum Gate Threshold Voltage

1 V, 1.2 V, 3 V, 2 V

Minimum Operating Temperature

-55°C, -40°C

Package Type

TSDSON, D2PAK (TO-263), MZ, DPAK (TO-252)

Number of Elements Per Chip

1

Series

OptiMOS 3, OptiMOS T, DirectFET, HEXFET, HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

5 nC @ 4.5 V, 6.1 nC @ 4.5 V, 30 nC @ 10 V, 39 nC @ 10 V

Typical Turn Off Delay Time

13 ns, 18 ns, 43 ns

Typical Turn On Delay Time

2.9 ns, 3.4 ns, 6 ns, 9.2 ns, 14 ns