Infineon N Channel MOSFET Transistor, 20 V, 38 A, Surface Mount

Part Number

IPB60R099C6ATMA1, IRFR3518PBF

Maximum Drain Source Resistance

90 mΩ, 29 mΩ

Maximum Operating Temperature

+150°C, +175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

38 A

Mounting Type

Surface Mount

Forward Diode Voltage

0.9 V

Pin Count

3

Transistor Configuration

Single

Typical Input Capacitance Vds

2660 pF @ 100 V, 1710 pF@ 25 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.31 x 4.57 x 9.45 mm, 6.73 x 6.22 x 2.39 mm

Maximum Drain Source Voltage

600 V, 80 V

Maximum Gate Threshold Voltage

4 V

Maximum Power Dissipation

278 W, 110 W

Minimum Gate Threshold Voltage

2 V

Minimum Operating Temperature

-55°C

Package Type

D2PAK (TO-263), DPAK (TO-252)

Number of Elements Per Chip

1

Series

CoolMOS C6, HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

119 nC @ 10 V, 37 nC @ 10 V

Typical Turn Off Delay Time

75 ns, 37 ns

Typical Turn On Delay Time

15 ns, 12 ns