Infineon N Channel MOSFET Transistor, 20 V, 39 A, Surface Mount

Part Number

BSC120N03LSGATMA1, BSC120N03MSGATMA1

Maximum Drain Source Resistance

16.5 mΩ, 14 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

39 A

Mounting Type

Surface Mount

Pin Count

8

Transistor Configuration

Single

Typical Input Capacitance Vds

920 pF @ 15 V, 1100 pF @ 15 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

6.35 x 5.35 x 1.1 mm, 5.35 x 6.1 x 1.1 mm

Maximum Drain Source Voltage

30 V

Maximum Gate Threshold Voltage

2.2 V, 2 V

Maximum Power Dissipation

2.5 W, 28 W

Minimum Gate Threshold Voltage

1 V

Minimum Operating Temperature

-55°C

Package Type

TDSON

Number of Elements Per Chip

1

Series

OptiMOS 3

Transistor Material

Si

Typical Gate Charge at Vgs

11 nC @ 10 V, 15 nC @ 10 V

Typical Turn Off Delay Time

12 ns, 7 ns

Typical Turn On Delay Time

2.7 ns, 7.9 ns