Infineon N Channel MOSFET Transistor, 20 V, 4.5 A, Surface Mount

Part Number

SPB04N60C3ATMA1, SPD04N50C3, SPD04N50C3ATMA1

Maximum Drain Source Resistance

950 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

4.5 A

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Typical Input Capacitance Vds

490 pF @ 25 V, 470 pF @ 25 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.31 x 9.45 x 4.57 mm, 6.73 x 6.22 x 2.41 mm

Maximum Drain Source Voltage

650 V, 560 V

Maximum Gate Threshold Voltage

3.9 V

Maximum Power Dissipation

50 W

Minimum Gate Threshold Voltage

2.1 V

Minimum Operating Temperature

-55°C

Package Type

D2PAK (TO-263), DPAK (TO-252)

Number of Elements Per Chip

1

Series

CoolMOS C3

Transistor Material

Si

Typical Gate Charge at Vgs

19 nC @ 10 V, 22 nC @ 10 V

Typical Turn Off Delay Time

58.5 ns, 70 ns

Typical Turn On Delay Time

6 ns, 10 ns