Infineon N Channel MOSFET Transistor, 20 V, 44 A, Surface Mount

Part Number

IRFH5015TRPBF, IRFR1205PBF, IRFR1205TRPBF

Maximum Drain Source Resistance

31 mΩ, 27 mΩ

Maximum Operating Temperature

+150°C, +175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

44 A

Mounting Type

Surface Mount

Forward Diode Voltage

1.3 V

Forward Transconductance

38 S

Pin Count

8, 3

Transistor Configuration

Single

Typical Input Capacitance Vds

2300 pF @ 50 V, 1300 pF @ 25 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

6 x 5 x 0.85 mm, 6.73 x 6.22 x 2.39 mm

Maximum Drain Source Voltage

150 V, 55 V

Maximum Gate Threshold Voltage

5 V, 4 V

Maximum Power Dissipation

156 W, 107 W

Minimum Gate Threshold Voltage

3 V, 2 V

Minimum Operating Temperature

-55°C

Package Type

PQFN, DPAK (TO-252)

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

36 nC @ 10 V, 65 nC @ 10 V

Typical Turn Off Delay Time

14 ns, 47 ns

Typical Turn On Delay Time

9.4 ns, 7.3 ns