Infineon N Channel MOSFET Transistor, 20 V, 50 A, Surface Mount

Specifications

Product Details

Part Number

IPD50N04S4L08ATMA1, IPD200N15N3GATMA1, BSC067N06LS3GATMA1, IPD50N10S3L16ATMA1, BSC076N06NS3GATMA1, BSC100N06LS3GATMA1, BSC110N06NS3GATMA1, BSC190N15NS3GATMA1, IPB055N03LGATMA1, IPB081N06L3GATMA1, IPB090N06N3GATMA1, IPB200N15N3GATMA1, IPB50N10S3L16ATMA1, IPD050N03LGBTMA1, IPD060N03LGATMA1, IPD075N03LGATMA1, IPD079N06L3GBTMA1, IPD088N06N3GBTMA1, IPD50N04S408ATMA1, IPD50N04S410ATMA1

Maximum Drain Source Resistance

7.3 mΩ, 12.1 mΩ, 20 mΩ, 7.6 mΩ, 19.9 mΩ, 17.9 mΩ, 11 mΩ, 7.8 mΩ, 8.1 mΩ, 9 mΩ, 29 mΩ, 6.2 mΩ, 11.4 mΩ, 13.5 mΩ, 8.8 mΩ, 7.9 mΩ, 9.3 mΩ

Maximum Operating Temperature

+175°C, +150°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

50 A

Mounting Type

Surface Mount

Additional Details

Forward Diode Voltage

1.1 V, 1.3 V

Forward Transconductance

57 S, 75 S, 61 S

Pin Count

3, 8

Transistor Configuration

Single

Typical Input Capacitance Vds

1800 pF @ 25 V, 3800 pF @ 30 V, 1820 pF @ 75 V, 3000 pF @ 30 V, 3215 pF @ 25 V, 2600 pF @ 30 V, 2000 pF @ 30 V, 2400 pF @ 15 V, 3700 pF @ 30 V, 2900 pF @ 30 V, 1700 pF @ 15 V, 1400 pF @ 15 V, 1370 pF @ 25 V, 1100 pF @ 25 V

Automotive Standard

AEC-Q101

Category

Power MOSFET

Dimensions

6.73 x 6.22 x 2.41 mm, 5.49 x 6.35 x 1.1 mm, 10.36 x 9.45 x 4.57 mm, 6.5 x 7.22 x 2.3 mm, 5.35 x 6.1 x 1.1 mm, 6.1 x 5.49 x 1.1 mm, 10.31 x 9.45 x 4.57 mm, 10 x 9.25 x 4.4 mm, 6.731 x 6.223 x 2.413 mm, 6.5 x 6.22 x 2.3 mm

Channel Mode

Enhancement

Maximum Drain Source Voltage

40 V, 150 V, 60 V, 100 V, 30 V

Maximum Gate Threshold Voltage

2 V, 2.2 V, 4 V, 2.4 V

Maximum Power Dissipation

46 W, 69 W, 150 W, 100 W, 50 W, 125 W, 68 W, 79 W, 71 W, 56 W, 47 W, 41 W

Minimum Gate Threshold Voltage

1.2 V, 2 V, 1 V

Minimum Operating Temperature

-55°C

Package Type

DPAK (TO-252), TDSON, D2PAK (TO-263)

Number of Elements Per Chip

1

Series

OptiMOS T2, IPD200N15N3 G, OptiMOS 3, IPD50N10S3L-16, OptiMOS T

Transistor Material

Si

Typical Gate Charge at Vgs

23 nC @ 10 V, 23 nC @ 4.5 V, 37 nC @ 10 V, 49 nC @ 10 V, 34 nC @ 10 V, 25 nC @ 10 V, 15 nC @ 4.5 V, 22 nC @ 4.5 V, 36 nC @ 10 V, 10.8 nC @ 4.5 V, 8.7 nC @ 4.5 V, 17.2 nC @ 10 V, 14 nC @ 10 V

Typical Turn Off Delay Time

11 ns, 37 ns, 23 ns, 29 ns, 20 ns, 19 ns, 14 ns, 25 ns, 28 ns, 17 ns, 5 ns, 40 ns

Typical Turn On Delay Time

40 ns, 15 ns, 14 ns, 10 ns, 8 ns, 6.7 ns, 5 ns, 4.3 ns

Quantity

Select Variants View All

  • Part Number : IPD200N15N3GATMA1
    Maximum Drain Source Resistance : 20 mΩ
  • Maximum Drain Source Resistance : 12.1 mΩ
    Maximum Operating Temperature : +150°C
  • Maximum Drain Source Resistance : 7.6 mΩ
    Maximum Operating Temperature : +150°C
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