Infineon N Channel MOSFET Transistor, 20 V, 58 A, Through Hole
Specifications
Product Details
Part Number
IPP126N10N3GXKSA1
Maximum Drain Source Resistance
23.5 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
58 A
Mounting Type
Through Hole
Additional Details
Forward Diode Voltage
1.2 V
Forward Transconductance
57 S
Pin Count
3
Transistor Configuration
Single
Typical Input Capacitance Vds
1880 pF @ 50 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10.36 x 4.57 x 15.95 mm
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
3.5 V
Maximum Power Dissipation
94 W
Minimum Gate Threshold Voltage
2 V
Minimum Operating Temperature
-55°C
Package Type
TO-220
Number of Elements Per Chip
1
Series
OptiMOS 3
Transistor Material
Si
Typical Gate Charge at Vgs
26 nC @ 10 V
Typical Turn Off Delay Time
24 ns
Typical Turn On Delay Time
14 ns