Infineon N Channel MOSFET Transistor, 20 V, 64 A, Surface Mount

Part Number

IPB200N25N3GATMA1, IRFZ48NSPBF

Maximum Drain Source Resistance

20 mΩ, 14 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

64 A

Mounting Type

Surface Mount

Forward Diode Voltage

1.2 V

Forward Transconductance

122 S

Pin Count

3, 4

Transistor Configuration

Single

Typical Input Capacitance Vds

5340 pF @ 100 V, 1970 pF@ 25 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.31 x 9.45 x 4.57 mm, 10.67 x 9.65 x 4.83 mm

Maximum Drain Source Voltage

250 V, 55 V

Maximum Gate Threshold Voltage

4 V

Maximum Power Dissipation

300 W, 130 W

Minimum Gate Threshold Voltage

2 V

Minimum Operating Temperature

-55°C

Package Type

D2PAK (TO-263), SMD-220

Number of Elements Per Chip

1

Series

OptiMOS 3, HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

64 nC @ 10 V, 81 nC

Typical Turn Off Delay Time

45 ns, 34 ns

Typical Turn On Delay Time

18 ns, 12 ns