Infineon N Channel MOSFET Transistor, 20 V, 73 A, Through Hole

Specifications

Product Details

Part Number

AUIRFB4610, IRFB4610PBF

Maximum Drain Source Resistance

14 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

73 A

Mounting Type

Through Hole

Additional Details

Pin Count

3

Transistor Configuration

Single

Typical Input Capacitance Vds

3550 pF@ 50 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.66 x 4.82 x 16.51 mm, 10.54 x 4.69 x 8.77 mm

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

4 V

Maximum Power Dissipation

190 W

Minimum Gate Threshold Voltage

2 V

Minimum Operating Temperature

-55°C

Package Type

TO-220AB

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

90 nC @ 10 V

Typical Turn Off Delay Time

53 ns, 3 ns

Typical Turn On Delay Time

18 ns

Quantity

Select Variants

  • Part Number : AUIRFB4610
    Maximum Drain Source Resistance : 14 mΩ
  • Part Number : IRFB4610PBF
    Maximum Drain Source Resistance : 14 mΩ
Get Best Price>>