
Specifications
Part Number
AUIRFB4610, IRFB4610PBF
Maximum Drain Source Resistance
14 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
73 A
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Typical Input Capacitance Vds
3550 pF@ 50 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10.66 x 4.82 x 16.51 mm, 10.54 x 4.69 x 8.77 mm
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4 V
Maximum Power Dissipation
190 W
Minimum Gate Threshold Voltage
2 V
Minimum Operating Temperature
-55°C
Package Type
TO-220AB
Number of Elements Per Chip
1
Series
HEXFET
Transistor Material
Si
Typical Gate Charge at Vgs
90 nC @ 10 V
Typical Turn Off Delay Time
53 ns, 3 ns
Typical Turn On Delay Time
18 ns
Select Variants