
Specifications
Part Number
IPB107N20N3GATMA1
Maximum Drain Source Resistance
11 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
88 A
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Typical Input Capacitance Vds
5340 pF @ 100 V
Channel Mode
Enhancement
Dimensions
10.31 x 9.45 x 4.57 mm
Maximum Drain Source Voltage
200 V
Maximum Gate Threshold Voltage
4 V
Maximum Power Dissipation
300 W
Minimum Gate Threshold Voltage
2 V
Minimum Operating Temperature
-55°C
Package Type
D2PAK (TO-263)
Number of Elements Per Chip
1
Series
OptiMOS
Transistor Material
Si
Typical Gate Charge at Vgs
65 nC @ 10 V
Typical Turn Off Delay Time
41 ns
Typical Turn On Delay Time
18 ns