Infineon N Channel MOSFET Transistor, 20 V, 90 mA, Surface Mount

Part Number

BSS169H6906XTSA1, BSS225H6327FTSA1

Maximum Drain Source Resistance

12 Ω, 45 Ω

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

90 mA

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Typical Input Capacitance Vds

51 pF @ 25 V, 99 pF@ 25 V

Category

Small Signal

Channel Mode

Enhancement

Dimensions

2.9 x 1.3 x 1 mm, 4.5 x 2.5 x 1.5 mm

Maximum Drain Source Voltage

100 V, 600 V

Maximum Gate Threshold Voltage

1.8 V, 2.3 V

Maximum Power Dissipation

360 mW, 1 W

Minimum Gate Threshold Voltage

2.9 V, 1.3 V

Minimum Operating Temperature

-55°C

Package Type

SOT-23, SOT-89

Number of Elements Per Chip

1

Series

SIPMOS

Transistor Material

Si

Typical Gate Charge at Vgs

2.1 nC @ 7 V, 3.9 nC @ 10 V

Typical Turn Off Delay Time

11 ns, 62 ns

Typical Turn On Delay Time

2.9 ns, 14 ns