
Specifications
Part Number
AUIRF1010ZS, IRF1010ZSTRLPBF
Maximum Drain Source Resistance
7.5 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
94 A
Mounting Type
Surface Mount
Forward Diode Voltage
1.3 V
Forward Transconductance
33 S
Pin Count
3
Transistor Configuration
Single
Typical Input Capacitance Vds
2840 pF@ 25 V, 2840 pF @ 25 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10.67 x 9.65 x 4.83 mm, 10.67 x 11.3 x 4.83 mm
Maximum Drain Source Voltage
55 V
Maximum Gate Threshold Voltage
4 V
Maximum Power Dissipation
140 W
Minimum Gate Threshold Voltage
2 V
Minimum Operating Temperature
-55°C
Package Type
D2PAK (TO-263)
Number of Elements Per Chip
1
Series
HEXFET
Transistor Material
Si
Typical Gate Charge at Vgs
63 nC @ 10 V
Typical Turn Off Delay Time
36 ns
Typical Turn On Delay Time
18 ns
Select Variants