
Specifications
Part Number
IRFB7545PBF
Maximum Drain Source Resistance
5.9 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
95 A
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Typical Input Capacitance Vds
4010 pF @ 25 V
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10.67 x 4.83 x 16.51 mm
Maximum Drain Source Voltage
60 V
Maximum Gate Threshold Voltage
3.7 V
Maximum Power Dissipation
125 W
Minimum Gate Threshold Voltage
2.1 V
Minimum Operating Temperature
-55°C
Package Type
TO-220AB
Number of Elements Per Chip
1
Series
StrongIRFET
Transistor Material
Si
Typical Gate Charge at Vgs
75 nC @ 10 V
Typical Turn Off Delay Time
44 ns
Typical Turn On Delay Time
12 ns