Infineon N Channel MOSFET Transistor, 20 V, 97 A, Through Hole

Part Number

IRF100B202, IRFB4410ZGPBF, IRFB4410ZPBF, IRFP4410ZPBF

Maximum Drain Source Resistance

8.6 mΩ, 9 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

97 A

Mounting Type

Through Hole

Forward Diode Voltage

1.3 V

Forward Transconductance

123 S, 140 S

Pin Count

3+Tab, 3

Transistor Configuration

Single

Typical Input Capacitance Vds

4476 pF @ 50 V, 4820 pF @ 50 V, 4820 pF@ 50 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.67 x 4.83 x 16.51 mm, 10.66 x 4.82 x 9.02 mm, 15.87 x 5.31 x 20.7 mm

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

4 V

Maximum Power Dissipation

221 W, 230 W

Minimum Gate Threshold Voltage

2 V

Minimum Operating Temperature

-55°C

Package Type

TO-220, TO-220AB, TO-247AC

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

77 nC @ 10 V, 19 nC @ 50 V, 83 nC @ 10 V

Typical Turn Off Delay Time

55 ns, 43 ns

Typical Turn On Delay Time

11 ns, 16 ns