Infineon N Channel MOSFET Transistor, 30 V, 2 A, Through Hole

Part Number

SPA02N80C3XKSA1, SPP02N80C3XKSA1

Maximum Drain Source Resistance

2.7 mΩ, 2.7 Ω

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

30 V

Maximum Continuous Drain Current

2 A

Mounting Type

Through Hole

Forward Diode Voltage

1.2 V

Pin Count

3

Transistor Configuration

Single

Typical Input Capacitance Vds

290 pF @ 100V, 290 pF @ 100 V

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.85 x 4.85 x 16.15 mm, 10.36 x 4.57 x 15.95 mm

Maximum Drain Source Voltage

800 V

Maximum Gate Threshold Voltage

3.9 V

Maximum Power Dissipation

30.5 W, 42 W

Minimum Gate Threshold Voltage

2.1 V

Minimum Operating Temperature

-55°C

Package Type

TO-220, TO-220AB

Number of Elements Per Chip

1

Series

CoolMOS C3

Transistor Material

Si

Typical Gate Charge at Vgs

12 nC @ 10 V

Typical Turn Off Delay Time

72 ns

Typical Turn On Delay Time

25 ns