
Specifications
Part Number
IRFS38N20DPBF
Maximum Drain Source Resistance
54 mΩ
Maximum Operating Temperature
+175°C
Brand
Infineon
Channel Type
N Channel
Maximum Gate Source Voltage
30 V
Maximum Continuous Drain Current
38 A
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
10.67 x 9.65 x 4.83 mm
Maximum Drain Source Voltage
200 V
Maximum Gate Threshold Voltage
5 V
Maximum Power Dissipation
3.8 W
Minimum Gate Threshold Voltage
3 V
Minimum Operating Temperature
-55°C
Package Type
D2PAK (TO-263)
Number of Elements Per Chip
1
Series
HEXFET
Transistor Material
Si
Typical Gate Charge at Vgs
60 nC @ 10 V
Typical Input Capacitance Vds
2900 pF@ 25 V
Typical Turn Off Delay Time
29 ns
Typical Turn On Delay Time
16 ns