Infineon N Channel MOSFET Transistor, 30 V, 38 A, Surface Mount

Specifications

Product Details

Part Number

IRFS38N20DPBF

Maximum Drain Source Resistance

54 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

30 V

Maximum Continuous Drain Current

38 A

Mounting Type

Surface Mount

Additional Details

Pin Count

3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.67 x 9.65 x 4.83 mm

Maximum Drain Source Voltage

200 V

Maximum Gate Threshold Voltage

5 V

Maximum Power Dissipation

3.8 W

Minimum Gate Threshold Voltage

3 V

Minimum Operating Temperature

-55°C

Package Type

D2PAK (TO-263)

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

60 nC @ 10 V

Typical Input Capacitance Vds

2900 pF@ 25 V

Typical Turn Off Delay Time

29 ns

Typical Turn On Delay Time

16 ns

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