Infineon N Channel MOSFET Transistor, 30 V, 46 A, Through Hole

Part Number

IPP65R045C7XKSA1, IPW65R045C7FKSA1, IPZ65R045C7XKSA1, IRFB4229PBF

Maximum Drain Source Resistance

45 mΩ, 46 mΩ

Maximum Operating Temperature

+150°C, +175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

30 V

Maximum Continuous Drain Current

46 A

Mounting Type

Through Hole

Forward Diode Voltage

0.9 V

Pin Count

3, 4

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.36 x 4.57 x 15.95 mm, 16.13 x 21.1 x 5.21 mm, 10.66 x 4.82 x 9.02 mm

Maximum Drain Source Voltage

700 V, 250 V

Maximum Gate Threshold Voltage

5 V

Maximum Power Dissipation

227 W, 330 W

Minimum Gate Threshold Voltage

3 V

Minimum Operating Temperature

-55°C, -40°C

Package Type

TO-220, TO-247, TO-220AB

Number of Elements Per Chip

1

Series

CoolMOS C7, HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

93 nC @ 10 V, 72 nC @ 10 V

Typical Input Capacitance Vds

4340 pF @ 400 V, 4560 pF@ 25 V

Typical Turn Off Delay Time

82 ns

Typical Turn On Delay Time

20 ns