Infineon N Channel MOSFET Transistor, 30 V, 5.1 A, Surface Mount

Part Number

IPD90R1K2C3BTMA1

Maximum Drain Source Resistance

2.5 Ω

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

30 V

Maximum Continuous Drain Current

5.1 A

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

6.73 x 6.22 x 2.41 mm

Maximum Drain Source Voltage

900 V

Maximum Gate Threshold Voltage

3.5 V

Maximum Power Dissipation

83 W

Minimum Gate Threshold Voltage

2.5 V

Minimum Operating Temperature

-55°C

Package Type

DPAK (TO-252)

Number of Elements Per Chip

1

Series

CoolMOS C3

Transistor Material

Si

Typical Gate Charge at Vgs

28 nC @ 10 V

Typical Input Capacitance Vds

710 pF @ 100 V

Typical Turn Off Delay Time

400 ns

Typical Turn On Delay Time

70 ns