Infineon N Channel MOSFET Transistor, 30 V, 5.4 A, Through Hole

Part Number

IPS65R1K5CEAKMA1

Maximum Drain Source Resistance

1.5 Ω

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

30 V

Maximum Continuous Drain Current

5.4 A

Mounting Type

Through Hole

Forward Diode Voltage

0.9 V

Pin Count

3

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

6.73 x 2.4 x 6.22 mm

Maximum Drain Source Voltage

700 V

Maximum Gate Threshold Voltage

3.5 V

Maximum Power Dissipation

5 W

Minimum Gate Threshold Voltage

2.5 V

Minimum Operating Temperature

-40°C

Package Type

IPAK (TO-251)

Number of Elements Per Chip

1

Series

CoolMOS CE

Typical Gate Charge at Vgs

10.5 nC @ 10 V

Typical Input Capacitance Vds

225 pF @ 100 V

Typical Turn Off Delay Time

33 ns

Typical Turn On Delay Time

7.7 ns