Infineon N Channel MOSFET Transistor, 30 V, 51 A, Through Hole

Part Number

IRFB52N15DPBF

Maximum Drain Source Resistance

32 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

30 V

Maximum Continuous Drain Current

51 A

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.66 x 4.82 x 16.51 mm

Maximum Drain Source Voltage

150 V

Maximum Gate Threshold Voltage

5 V

Maximum Power Dissipation

230 W

Minimum Gate Threshold Voltage

3 V

Minimum Operating Temperature

-55°C

Package Type

TO-220AB

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

60 nC @ 10 V

Typical Input Capacitance Vds

2770 pF @ 25 V

Typical Turn Off Delay Time

28 ns

Typical Turn On Delay Time

16 ns