Infineon N Channel MOSFET Transistor, 30 V, 55 A, Through Hole

Part Number

SPW55N80C3FKSA1

Maximum Drain Source Resistance

85 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

30 V

Maximum Continuous Drain Current

55 A

Mounting Type

Through Hole

Forward Diode Voltage

0.95 V

Pin Count

3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

16.13 x 21.1 x 5.21 mm

Maximum Drain Source Voltage

850 V

Maximum Power Dissipation

500 W

Minimum Operating Temperature

-55°C

Package Type

TO-247

Number of Elements Per Chip

1

Series

CoolMOS C3

Transistor Material

Si

Typical Gate Charge at Vgs

288 nC @ 10 V

Typical Input Capacitance Vds

7520 pF @ 100 V

Typical Turn Off Delay Time

200 ns

Typical Turn On Delay Time

45 ns