Infineon N Channel MOSFET Transistor, 30 V, 60 A, Through Hole

Part Number

IRFB4332PBF

Maximum Drain Source Resistance

33 mΩ

Maximum Operating Temperature

+175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

30 V

Maximum Continuous Drain Current

60 A

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

10.66 x 4.82 x 9.02 mm

Maximum Drain Source Voltage

250 V

Maximum Gate Threshold Voltage

5 V

Maximum Power Dissipation

390 W

Minimum Gate Threshold Voltage

3 V

Minimum Operating Temperature

-40°C

Package Type

TO-220AB

Number of Elements Per Chip

1

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

99 nC @ 10 V

Typical Input Capacitance Vds

5860 pF@ 25 V