Infineon N Channel MOSFET Transistor, 8 V, 1.4 A, Surface Mount

Part Number

BSD816SNH6327XTSA1, BSS816NWH6327XTSA1

Maximum Drain Source Resistance

240 mΩ

Maximum Operating Temperature

+150°C, +175°C

Brand

Infineon

Channel Type

N Channel

Maximum Gate Source Voltage

8 V

Maximum Continuous Drain Current

1.4 A

Mounting Type

Surface Mount

Forward Diode Voltage

1.1 V

Forward Transconductance

4.9 S

Pin Count

6, 3

Transistor Configuration

Single

Category

Small Signal

Channel Mode

Enhancement

Dimensions

2 x 1.25 x 0.8 mm

Maximum Drain Source Voltage

20 V

Maximum Gate Threshold Voltage

0.95 V, 0.75 V

Maximum Power Dissipation

500 mW

Minimum Gate Threshold Voltage

0.3 V

Minimum Operating Temperature

-55°C, -40°C

Package Type

SOT-363 (SC-88), SOT-323 (SC-70)

Number of Elements Per Chip

1

Series

OptiMOS 2

Transistor Material

Si

Typical Gate Charge at Vgs

0.6 nC @ 2.5 V

Typical Input Capacitance Vds

126 pF @ 10 V

Typical Turn Off Delay Time

11 ns

Typical Turn On Delay Time

5.3 ns