Infineon N Channel, P Channel MOSFET Transistor, 12 V, 1.5 A, Surface Mount

Part Number

BSL215CH6327XTSA1

Maximum Drain Source Resistance

250 mΩ, 280 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

N Channel, P Channel

Maximum Gate Source Voltage

12 V

Maximum Continuous Drain Current

1.5 A

Mounting Type

Surface Mount

Forward Diode Voltage

1.1 V

Forward Transconductance

4 S

Pin Count

6

Transistor Configuration

Isolated

Category

Small Signal

Channel Mode

Enhancement

Dimensions

2.9 x 1.6 x 1 mm

Maximum Drain Source Voltage

20 V

Maximum Gate Threshold Voltage

0.6 V, 1.2 V

Maximum Power Dissipation

500 mW

Minimum Gate Threshold Voltage

0.7 V, 1.2 V

Minimum Operating Temperature

-55°C

Package Type

TSOP

Number of Elements Per Chip

2

Series

OptiMOS

Transistor Material

Si

Typical Gate Charge at Vgs

0.73 nC @ 4.5 V, 3 nC @ 5 V

Typical Input Capacitance Vds

110 pF @ 10 V, 270 pF @ -10 V

Typical Turn Off Delay Time

6.8 ns, 14.5 ns

Typical Turn On Delay Time

4.1 ns, 6.7 ns