Infineon N Channel, P Channel MOSFET Transistor, 20 V, 1.5 A, Surface Mount
Specifications
Product Details
Part Number
BSL316CH6327XTSA1
Maximum Drain Source Resistance
270 mΩ, 280 mΩ
Maximum Operating Temperature
+150°C
Brand
Infineon
Channel Type
N Channel, P Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
1.5 A
Mounting Type
Surface Mount
Additional Details
Forward Diode Voltage
1.1 V
Forward Transconductance
2.3 S
Pin Count
6
Transistor Configuration
Isolated
Category
Small Signal
Channel Mode
Enhancement
Dimensions
2.9 x 1.6 x 1 mm
Maximum Drain Source Voltage
30 V
Maximum Gate Threshold Voltage
2 V
Maximum Power Dissipation
500 mW
Minimum Gate Threshold Voltage
1 V
Minimum Operating Temperature
-55°C
Package Type
PG-TDSOP
Number of Elements Per Chip
2
Series
OptiMOS
Transistor Material
Si
Typical Gate Charge at Vgs
0.6 nC @ 5 V, 2.4 nC @ 5 V
Typical Input Capacitance Vds
212 pF @ -15 V, 71 pF @ 15 V
Typical Turn Off Delay Time
5.8 ns, 14.3 ns
Typical Turn On Delay Time
3.4 ns, 5 ns