Infineon N Channel, P Channel MOSFET Transistor, 20 V, 2.7 A, Surface Mount

Part Number

IRF7509TRPBF

Maximum Drain Source Resistance

110 mΩ, 200 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

N Channel, P Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

2.7 A

Mounting Type

Surface Mount

Pin Count

8

Transistor Configuration

Isolated

Category

Power MOSFET

Channel Mode

Enhancement

Dimensions

3 x 3 x 0.86 mm

Maximum Drain Source Voltage

30 V

Maximum Gate Threshold Voltage

1 V

Maximum Power Dissipation

1.25 W

Minimum Gate Threshold Voltage

1 V

Minimum Operating Temperature

-55°C

Package Type

MSOP

Number of Elements Per Chip

2

Series

HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

7.5 nC @ 10 V, 7.8 nC @ 10 V

Typical Input Capacitance Vds

180 pF@ 25 V, 210 pF@ 25 V

Typical Turn Off Delay Time

12 ns, 19 ns

Typical Turn On Delay Time

4.7 ns, 9.7 ns