Infineon N Channel, P Channel MOSFET Transistor, 20 V, 4.7 A, Surface Mount

Part Number

IRF7343TRPBF, IRF7343PBF

Maximum Drain Source Resistance

0.065 Ω, 0.17 Ω, 50 mΩ, 105 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

N Channel, P Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

4.7 A

Mounting Type

Surface Mount

Forward Diode Voltage

1.2 V

Pin Count

8

Transistor Configuration

Isolated

Category

Power MOSFET

Channel Mode

Depletion, Enhancement

Dimensions

5 x 4 x 1.5 mm

Maximum Drain Source Voltage

55 V

Maximum Gate Threshold Voltage

1 V

Maximum Power Dissipation

2 W

Minimum Gate Threshold Voltage

1 V

Minimum Operating Temperature

-55°C

Package Type

SO, SOIC

Number of Elements Per Chip

1, 2

Series

IRF7343PbF, HEXFET

Transistor Material

Si

Typical Gate Charge at Vgs

2.3 nC @ 10 V, 24 nC @ 10 V, 24 nC @ 10 V, 26 nC @ 10 V

Typical Input Capacitance Vds

690 pF @ -25 V, 740 pF @ 25 V, 690 pF @ 25 V, 740 pF @ 25 V

Typical Turn Off Delay Time

32 ns, 43 ns

Typical Turn On Delay Time

8.3 ns, 14 ns