Infineon P Channel MOSFET Transistor, 12 V, 1.18 A, Surface Mount

Part Number

BSS215PH6327XTSA1

Maximum Drain Source Resistance

280 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

P Channel

Maximum Gate Source Voltage

12 V

Maximum Continuous Drain Current

1.18 A

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Category

Small Signal

Channel Mode

Enhancement

Dimensions

2.9 x 1.3 x 1 mm

Maximum Drain Source Voltage

20 V

Maximum Gate Threshold Voltage

0.6 V

Maximum Power Dissipation

500 mW

Minimum Gate Threshold Voltage

1.2 V

Minimum Operating Temperature

-55°C

Package Type

SOT-23

Number of Elements Per Chip

1

Series

OptiMOS P

Transistor Material

Si

Typical Gate Charge at Vgs

3.6 nC @ 4.5 V

Typical Input Capacitance Vds

260 pF @ -15 V

Typical Turn Off Delay Time

14.5 ns

Typical Turn On Delay Time

6.7 ns