Infineon P Channel MOSFET Transistor, 12 V, 500 mA, Surface Mount

Part Number

BSS209PWH6327XTSA1

Maximum Drain Source Resistance

900 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

P Channel

Maximum Gate Source Voltage

12 V

Maximum Continuous Drain Current

500 mA

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Category

Small Signal

Channel Mode

Enhancement

Dimensions

2 x 1.25 x 0.8 mm

Maximum Drain Source Voltage

20 V

Maximum Gate Threshold Voltage

1.2 V

Maximum Power Dissipation

300 mW

Minimum Gate Threshold Voltage

0.6 V

Minimum Operating Temperature

-55°C

Package Type

SOT-323 (SC-70)

Number of Elements Per Chip

1

Series

OptiMOS P

Transistor Material

Si

Typical Gate Charge at Vgs

1 nC @ 4.5 V

Typical Input Capacitance Vds

87 pF @ -15 V

Typical Turn Off Delay Time

6 ns

Typical Turn On Delay Time

2.6 ns