Infineon P Channel MOSFET Transistor, 20 V, 1 A, Surface Mount

Part Number

BSP322PH6327XTSA1

Maximum Drain Source Resistance

800 mΩ

Maximum Operating Temperature

+150°C

Brand

Infineon

Channel Type

P Channel

Maximum Gate Source Voltage

20 V

Maximum Continuous Drain Current

1 A

Mounting Type

Surface Mount

Pin Count

3+Tab

Transistor Configuration

Single

Category

Small Signal

Channel Mode

Enhancement

Dimensions

6.5 x 3.5 x 1.6 mm

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

1 V

Maximum Power Dissipation

1.8 W

Minimum Gate Threshold Voltage

2 V

Minimum Operating Temperature

-55°C

Package Type

SOT-223

Number of Elements Per Chip

1

Series

SIPMOS

Transistor Material

Si

Typical Gate Charge at Vgs

12.4 nC @ 10 V

Typical Input Capacitance Vds

280 pF @ -25 V

Typical Turn Off Delay Time

21.2 ns

Typical Turn On Delay Time

4.6 ns