
Specifications
Part Number
IRF7416PBF
Maximum Drain Source Resistance
20 mΩ
Maximum Operating Temperature
+150°C
Brand
Infineon
Channel Type
P Channel
Maximum Gate Source Voltage
20 V
Maximum Continuous Drain Current
10 A
Mounting Type
Surface Mount
Pin Count
8
Transistor Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Dimensions
5 x 4 x 1.5 mm
Maximum Drain Source Voltage
30 V
Maximum Gate Threshold Voltage
2.04 V
Maximum Power Dissipation
2.5 W
Minimum Gate Threshold Voltage
1 V
Minimum Operating Temperature
-55°C
Package Type
SOIC
Number of Elements Per Chip
1
Series
HEXFET
Transistor Material
Si
Typical Gate Charge at Vgs
61 nC @ 10 V
Typical Input Capacitance Vds
1700 pF@ 25 V
Typical Turn Off Delay Time
59 ns
Typical Turn On Delay Time
18 ns